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 ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF648
Repetitive voltage up to Mean forward current Surge current 2500 V 2510 A 30 kA
FINAL SPECIFICATION
feb 00 - ISSUE : 01
Symbol
Characteristic
Conditions
Tj [C]
Value
Unit
BLOCKING
V V I
RRM RSM RRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM
150 150 150
2500 2600 100
V V mA
CONDUCTING
I I I
F (AV)
Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance
180 sin ,50 Hz, Th=55C, double side cooled 180 square,50 Hz,Th=55C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 150
2510 2570 30 4500 x1E3
A A kA As V V mohm
F (AV) FSM
I t V V r
FM F(TO) F
Forward current = 1500 A
25 150 150
1,4 0,85 0,300
SWITCHING
t rr Q rr I rr s V
FR
Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery
I F = 1000 A di/dt= VR = 250 A/s 50 V 150
5,0 1000 600 0,5
s C A
di/dt=
100 A/s
150
4
V
MOUNTING
R th(j-h) T F
j
Thermal impedance Operating junction temperature Mounting force Mass
Junction to heatsink, double side cooled
14 -30 / 150 35.0 / 40.0 850
C/kW C kN g
ORDERING INFORMATION : ARF648 S 25 standard specification
VRRM/100
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 00 - ISSUE : 01
ANSALDO
FORWARD CHARACTERISTIC Tj = 150 C
SURGE CHARACTERISTIC Tj = 150 C
8000 7000 6000 Forward Current [A] 5000 ITSM [kA] 0,6 1,1 1,6 2,1 2,6 3,1 3,6
35 30 25 20 15 10 5 0 1 10 n cycles 100 Forward Voltage [V]
4000 3000 2000 1000 0
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED
16,0 14,0 12,0 Zth j-h [C/kW] 10,0 8,0 6,0 4,0 2,0 0,0 0,001 0,01 0,1 t[s] 1 10 100
Distributed by All the characteristics given in this data sheet are guaranteed only with clamping force, cleaned and lubricated heatsink, surfaces with flatness < and roughness < 2 m. In the interest of product improvement ANSALDO reserves the right to any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over background) and characteristics is reported. uniform .03 mm change shaded
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 00 - ISSUE : 01
ANSALDO
DISSIPATION CHARACTERISTICS SQUARE WAVE
7000
DC
6000
90
180 120
Power Dissipation [W]
5000
30
60
4000 3000 2000 1000 0 0 500 1000 1500 2000 2500 3000 3500 4000 Mean Forward Current [A]
SINE WAVE 8000 7000 Power Dissipation [W] 6000
60 90 120 180
5000 4000 3000 2000 1000 0 0 500
30
1000
1500
2000
2500
3000
3500
4000
Mean Forward Current [A]
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 00 - ISSUE : 01
ANSALDO
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE 30
25
20 VFR [V]
Tj = 150 C
15
Tj = 25 C
IF VFR
10
5
VF
0 0 200 400 600 di/dt [A/s] 800 1000 1200
REVERSE RECOVERY CHARGE Tj=150C 1400
2000 A
REVERSE RECOVERY CURRENT Tj=150C 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 100 200 di/dt [A/s] 300
2000 A 1000A 500 A
1200
1000 A
1000
500 A
Qrr [C]
600 400 200 0 0 100 200 di/dt [A/s] 300 400
Irr [A]
800
400
ta = Irr / (di/dt)
tb = trr - ta
IF
d i/d t ta
tb
Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr 2) (Qrr - Irr ta /
Irr Vr


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