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Datasheet File OCR Text: |
ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - FAST RECOVERY DIODE ARF648 Repetitive voltage up to Mean forward current Surge current 2500 V 2510 A 30 kA FINAL SPECIFICATION feb 00 - ISSUE : 01 Symbol Characteristic Conditions Tj [C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 150 150 150 2500 2600 100 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I t Forward voltage Threshold voltage Forward slope resistance 180 sin ,50 Hz, Th=55C, double side cooled 180 square,50 Hz,Th=55C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 150 2510 2570 30 4500 x1E3 A A kA As V V mohm F (AV) FSM I t V V r FM F(TO) F Forward current = 1500 A 25 150 150 1,4 0,85 0,300 SWITCHING t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery I F = 1000 A di/dt= VR = 250 A/s 50 V 150 5,0 1000 600 0,5 s C A di/dt= 100 A/s 150 4 V MOUNTING R th(j-h) T F j Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 14 -30 / 150 35.0 / 40.0 850 C/kW C kN g ORDERING INFORMATION : ARF648 S 25 standard specification VRRM/100 ARF648 FAST RECOVERY DIODE FINAL SPECIFICATION feb 00 - ISSUE : 01 ANSALDO FORWARD CHARACTERISTIC Tj = 150 C SURGE CHARACTERISTIC Tj = 150 C 8000 7000 6000 Forward Current [A] 5000 ITSM [kA] 0,6 1,1 1,6 2,1 2,6 3,1 3,6 35 30 25 20 15 10 5 0 1 10 n cycles 100 Forward Voltage [V] 4000 3000 2000 1000 0 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16,0 14,0 12,0 Zth j-h [C/kW] 10,0 8,0 6,0 4,0 2,0 0,0 0,001 0,01 0,1 t[s] 1 10 100 Distributed by All the characteristics given in this data sheet are guaranteed only with clamping force, cleaned and lubricated heatsink, surfaces with flatness < and roughness < 2 m. In the interest of product improvement ANSALDO reserves the right to any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over background) and characteristics is reported. uniform .03 mm change shaded ARF648 FAST RECOVERY DIODE FINAL SPECIFICATION feb 00 - ISSUE : 01 ANSALDO DISSIPATION CHARACTERISTICS SQUARE WAVE 7000 DC 6000 90 180 120 Power Dissipation [W] 5000 30 60 4000 3000 2000 1000 0 0 500 1000 1500 2000 2500 3000 3500 4000 Mean Forward Current [A] SINE WAVE 8000 7000 Power Dissipation [W] 6000 60 90 120 180 5000 4000 3000 2000 1000 0 0 500 30 1000 1500 2000 2500 3000 3500 4000 Mean Forward Current [A] ARF648 FAST RECOVERY DIODE FINAL SPECIFICATION feb 00 - ISSUE : 01 ANSALDO SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 30 25 20 VFR [V] Tj = 150 C 15 Tj = 25 C IF VFR 10 5 VF 0 0 200 400 600 di/dt [A/s] 800 1000 1200 REVERSE RECOVERY CHARGE Tj=150C 1400 2000 A REVERSE RECOVERY CURRENT Tj=150C 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 100 200 di/dt [A/s] 300 2000 A 1000A 500 A 1200 1000 A 1000 500 A Qrr [C] 600 400 200 0 0 100 200 di/dt [A/s] 300 400 Irr [A] 800 400 ta = Irr / (di/dt) tb = trr - ta IF d i/d t ta tb Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr 2) (Qrr - Irr ta / Irr Vr |
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